Semiconductor quartz is an indispensable high-end foundational material in integrated circuit manufacturing, mainly referring to semiconductor-grade quartz products such as quartz boats, tubes, crucibles and rings used in wafer fabrication, as well as liners for diffusion furnaces, etching machines and CVD equipment. Compared with photovoltaic quartz, semiconductor quartz imposes stricter requirements on purity and consistency. In core chipmaking processes such as oxidation, diffusion, annealing and etching, quartz components must serve long-term at temperatures above 1100°C in highly corrosive atmospheres. Any trace of impurity release or particle shedding can contaminate wafers and directly affect chip yield and device reliability. After more than ten years of high-purity quartz sand production, ESSN has achieved commercial mass production of semiconductor quartz materials and products based on its proprietary purification technology and full-process quality control system. Its products feature metal impurity content as low as ppb level, high purity, excellent temperature resistance and stable batch consistency, meeting the stringent requirements of advanced processes for quartz consumables. At the same time, the company has led the technological upgrading of semiconductor quartz, helping to break the long-standing reliance on imported high-end quartz materials and making positive contributions to filling the domestic industry gap and safeguarding the chip supply chain. As semiconductor localization accelerates, the strategic value and market demand for semiconductor quartz will continue to rise.
Silica Purity
≥99.999% (5N grade); metal impurities such as Fe, Al, Na, K and Li as low as ppb level
Temperature Resistance
Withstands high-temperature process environments above 1200°C in long-term service; softening point approx. 1730°C; excellent thermal shock resistance

Ultra-High Purity with ppb-Level Metal Impurity Control
High-Temperature and Thermal Shock Resistance, Excellent Process Adaptability
Strong Chemical Stability and Plasma Corrosion Resistance
Plasma resistance, low particles
Resists aggressive plasma corrosion with low particle shedding, ensuring etching yield
Clean high-temperature oxidation, no contamination
No impurity release in oxidation processes above 1100°C, zero wafer contamination
Ultra-high transmittance, extremely low loss
High transmittance from visible to infrared, extremely low optical signal transmission loss
Arsenic corrosion resistance, chemically stable
Resists arsenic vapor corrosion and remains chemically inert at high temperature for pure GaAs crystal growth